PROCESS FOR MANUFACTURING MOSFETS USING AMORPHOUS CARBON REPLACEMENT GATE AND STRUCTURES FORMED IN ACCORDANCE THEREWITH

摘要

In the manufacture of a MOSFET using a replacement gate process, a dummy gate (40) is formed of amorphous carbon. The dummy gate (40) is removed after formation of source and drain diffusions (50). Removal is accomplished by an ashing process using a dry plasma such as oxygen or hydrogen that exhibits good selectivity with respect to surrounding materials. The dummy gate (40) is replaced by an inlaid metal gate (56).