| 摘要 |
PURPOSE: A magnetic memory device having a yoke layer and a manufacturing method thereof are provided to write information by a current magnetic field every bit and read out pieces of information 1 and 0 by a resistance change depending on the cell magnetization state. CONSTITUTION: In the magnetic memory device according to the first embodiment, a bit line(19) and word line(13) which are made of, e.g., Cu run in different directions. An MTJ element(15) is arranged between the bit line(19) and the word line(13) at the node between the bit line(19) and the word line(13). A first yoke main body(12) is so formed as to cover the lower and side surfaces of the word line(13). A second yoke main body(20) is so formed as to cover the upper and side surfaces of the bit line(19). First, second, third, and fourth yoke tips(18a,18b,18c,18d) are formed around the MTJ element(15). The first and second yoke tips(18a,18b) are arranged at an interval from the MTJ element(15) on the two sides of the MTJ element(15) in a direction in which the word line(13) runs. The third and fourth yoke tips(18c,18d) are arranged at an interval from the MTJ element(15) on the two sides of the MTJ element(15) in a direction in which the bit line(19) runs.
|
