| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To inspect a mask by using electron beams used for proximity exposure by an electron beam proximity exposure system. <P>SOLUTION: Mask inspection equipment is incorporated in an electron beam proximity exposure system 10 transferring a mask pattern that is formed on a mask 30 to a resist layer 42 on a wafer 40 by arranging the mask 30 in the proximity of the wafer 40 and scanning the mask 30 by an electron beam 15. This mask inspection equipment comprises a first SEM 70 provided on a wafer stage 60 and a stage driving means moving the wafer stage 60 in such a manner that a second electron of the electron beam 15 transmitted through the mask pattern of the mask 30 at the time of inspection of the mask 30 can be captured by a second electron detector 72 of the SEM. The mask pattern on the underside of the mask 30 is photographed by this SEM. <P>COPYRIGHT: (C)2004,JPO</p> |
