发明名称 TREATMENT APPARATUS AND METHOD FOR RELEASING MATERIAL TO BE RELEASED FROM ELECTROSTATIC CHUCK
摘要 PROBLEM TO BE SOLVED: To prevent the occurrence of an abnormal release when a substrate is released from an electrostatic chuck provided in a treatment apparatus and to shorten a time required for the release. SOLUTION: The wafer placing surface of the electrostatic chuck 4 is formed in a recess curved surface state, and a wafer W is attracted and held along the placing surface. The curved surface is formed in such a manner that, when a voltage to a chuck electrode 41 is stopped, a residual attracting force generated between the wafer W and the chuck 4 becomes larger than a restoring force tending to restore the wafer W. After the attraction of the wafer W is released, when the wafer W is pressed by a support pin 63 and reset to an original state, a gap is formed between the wafer W and the pin 63, and thereby an electrostatic capacity between the wafer W and the chuck 4 is reduced. Thus, residual charge existing between the wafer W and the chuck 4 is moved toward the peripheral edge region of the wafer F, is released to a ground through a ring member 5 and accordingly can be rapidly destaticized. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004040047(A) 申请公布日期 2004.02.05
申请号 JP20020198722 申请日期 2002.07.08
申请人 TOKYO ELECTRON LTD 发明人 NISHIMOTO SHINYA
分类号 H01L21/3065;H01L21/205;H01L21/68;H01L21/683;H02N13/00;(IPC1-7):H01L21/68;H01L21/306 主分类号 H01L21/3065
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