| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to be capable of improving the degree of integration of an upper metal line, preventing the malfunction of the device caused by the thickness change of a dielectric layer, and increasing the capacitance of a capacitor. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate(21), a lower metal line(23) and a lower insulating layer(22) formed at the upper portion of the semiconductor substrate structure, and an interlayer dielectric(24) formed at the upper portion of the resultant structure. At this time, the interlayer dielectric includes an electrode hole(201). The semiconductor device further includes the first electrode layer(25) having a predetermined thickness, formed along the inner wall of the electrode hole, a pair of dielectric layers(26,27) formed at the upper portion of the first electrode layer, and the second electrode layer filled in the electrode hole. Preferably, an upper metal line is partially formed at the upper portion of the second electrode layer.
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