| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can sufficiently assure an overlay margin of a bit line contact and to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing the semiconductor memory device includes a step of forming a plurality of sacrificial gates isolated at a predetermined interval from each other on a semiconductor substrate, a step of forming a first conductive film on the substrate exposed between the sacrificial gates, a step of forming an insulating film between first layers on the substrate so as to expose the first conductive film and the sacrificial gate, a step of removing the plurality of the sacrificial gates to form a plurality of openings, a step of forming a plurality of gates in the plurality of the openings, a step of forming a capping layer on each gate, a step of forming a second conductive film on the first conductive film, a step of forming an insulating film between the second layers on the first conductive film, a step of etching the insulating film between the second layers to form the bit line contact for exposing the second conductive film. <P>COPYRIGHT: (C)2004,JPO |
