发明名称 WORD LINE DRIVING CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a word line driving circuit in which memory yield can be improved by making a main word line driver signal floating in a pre-charged state and suppressing increase of a standby current caused by resistive connection of adjacent power source wirings. SOLUTION: In a word line driving circuit consisting of a main word line driving circuit generating a word line driving signal and a control circuit generating a control signal controlling this circuit, the main word line driving circuit comprises such control means that turns on the pull-up transistor for a fixed time at the time of input of a pre-charge command, turns on the pull-down transistor, so that the word line driving signal is pre-charged to a high state, on the other hand, after pre-charging, the pull-up transistor and the pull-down transistor are turned off, and the word line driving signal is made floating. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004039204(A) 申请公布日期 2004.02.05
申请号 JP20020370218 申请日期 2002.12.20
申请人 HYNIX SEMICONDUCTOR INC 发明人 CHOI HONG SOK
分类号 H03K19/0175;G11C8/08;G11C11/407;(IPC1-7):G11C11/407;H03K19/017 主分类号 H03K19/0175
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