| 摘要 |
PROBLEM TO BE SOLVED: To realize manufacturing a semiconductor device, in which a very high-speed NPN transistor and a high-speed PNP transistor are formed in the same chip, in a process which has remarkably reduced the number of processes than before. SOLUTION: At each transistor part, a first opening is formed in an insulating film 8 and a second opening, which is smaller than the first opening, is formed in a poly-crystal silicon layer 11 coaxially with the first opening. The first opening is filled with a single crystal layer which has grown from the surface of an N-type epitaxial layer 5 and a poly-crystal layer which has grown from part of the bottom of the P-type poly-crystal silicon layer 11, and the single crystal layer includes at least the P-type single crystal silicon layer. At the PNP transistor part, the single crystal silicon layer is included as a part of an emitter region, and at the NPN transistor part, the single crystal silicon layer is included as an active base region. COPYRIGHT: (C)2004,JPO
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