| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device provided with both of a high access speed which is a merit of an MRAM constituted of one selection element and one TMR element and the reduction of a cell area which is a merit of a cross point type MRAM. SOLUTION: The memory device provided with TMR elements 13 insulated from writing word lines (1st wiring) 11 and connected to a bit line (2nd wiring) 12 in areas where the writing word lines 11 and the bit line 12 three-dimensionally intersect with each other, is provided with connection holes 61 penetrating the writing word lines 11 in a state insulated from the writing word lines 11 to connect the TMR elements 13 to 2nd landing pads (wiring layers) 33 formed on the lower layer of the writing word lines 11, and contacts 63 formed in the connection holes 61 via sidewall insulating films 62 to connect the TMR elements 13 to the 2nd landing pads 33. COPYRIGHT: (C)2004,JPO
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