| 摘要 |
PROBLEM TO BE SOLVED: To provide an ultraviolet photodetecting element in which the problem of lattice mismatching between a lattice interval of a crystal growing surface of a substrate and a lattice interval of a nitride semiconductor of forming a photodetecting region is solved. SOLUTION: In the ultraviolet photodetecting element, a nitride buffer layer, an n-type nitride semiconductor layer and a single or a plurality of nitride semiconductor layers are sequentially deposited and formed on a ZrB<SB>2</SB>substrate. The n-type nitride semiconductor layer and a single or a plurality of semiconductor layers of the single or the plurality of nitride semiconductor layers interposed between a pair of electrodes are operated as a photodetecting region. COPYRIGHT: (C)2004,JPO
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