发明名称 METHOD FOR MANUFACTURING THIN-FILM MULTILAYER DEVICE
摘要 PROBLEM TO BE SOLVED: To enable a continuous process for multilayer formation without interrupting a vacuum process. SOLUTION: A base substrate 11 is a 125μm-thick polyimide substrate, and oil 12 is Fomblin oil. The oil 12 is heated in a vacuum in a heater-installed tank for vaporization, and vapor is discharged out of a fine nozzle and applied to the base substrate 11. An aluminum conductor 13 is then formed by sputtering aluminum, and is converted into a capacitor electrode. Next, the aluminum conductor 13 for electrode formation is oxidized in plasma for conversion into an aluminum oxide for the formation of a dielectric layer 14. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004039852(A) 申请公布日期 2004.02.05
申请号 JP20020194645 申请日期 2002.07.03
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SUETSUGU DAISUKE;NISHIHARA MUNEKAZU;HIGASHIDA TAKAAKI;YAMAMOTO KENICHI;OKUMA TAKAFUMI;NAKAJIMA SEIJI
分类号 H01G4/30;(IPC1-7):H01G4/30 主分类号 H01G4/30
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