| 摘要 |
PROBLEM TO BE SOLVED: To provide a SRAM cell of two transistors in which the magnitude of a cell is small, a manufacturing cost is low, charge voltage is low, and a standby current is low. SOLUTION: This memory is a SRAM of two transistors and its driving method, the SRAM cell has a first transistor, a second transistor, a first capacitor, and a second capacitor. The first transistor has a first terminal, a second terminal, and a gate terminal. The first terminal of the first transistor is connected to a first bit line, the gate terminal of the first transistor is connected to a word line. The first capacitor has a first electrode terminal and a second electrode terminal. The second electrode terminal of the first capacitor is connected to a cell substrate voltage. The second transistor has a first terminal, a second terminal, and a gate terminal. COPYRIGHT: (C)2004,JPO
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