发明名称 High purity sputter targets with target end-of-life indication and method of manufacture
摘要 A preferred sputter target assembly (10, 10') comprises a target (12, 12'), a backing plate (14, 14') bonded to the target (12, 12') along an interface (22, 22') and dielectric particles (20, 20') between the target (12, 12') and the backing plate (14, 14'). A preferred method for manufacturing the sputter target assembly (10, 10') comprises the steps of providing the target (12, 12') and the backing plate (14, 14'); distributing the dielectric particles (20, 20') between mating surfaces (24, 26) of the target (12, 12') and the backing plate (14, 14'), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12') to the backing plate (14, 14') along the mating surfaces (24, 26). A preferred method for sputtering in accordance with the invention comprises the steps of applying electrical power to the sputter target (50, 160); causing the sputter target assembly (50, 160) to produce an electromagnetic signal (not shown) when a target end-of-life condition exists; and monitoring the sputter target assembly (50, 160) to detect the electromagnetic signal.
申请公布号 US2004020769(A1) 申请公布日期 2004.02.05
申请号 US20030344783 申请日期 2003.07.23
申请人 IVANNOV EUGENE Y;SMATHERS DAVID B.;WICKERSHAM JR CHARLES E.;POOLE JOHN E. 发明人 IVANNOV EUGENE Y;SMATHERS DAVID B.;WICKERSHAM JR CHARLES E.;POOLE JOHN E.
分类号 C23C14/34;H01J37/34;(IPC1-7):C23C14/32;B23K31/02;B23K28/00;C25B9/00;C25B11/00;C25B13/00;B23K20/12 主分类号 C23C14/34
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