| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a characteristic not depending on a value of ▵Eg free of aluminum. <P>SOLUTION: An active region is formed in a DQW structure, a P composition is larger than 0.2 but smaller than 0.75, a barrier layer is structured with GaAsP or InGaAsP in which a difference from the distortion of a well layer (= distortion of substrate) is larger than -0.65%, and the well layer is formed of the InGaAsP which is aligned in a lattice with the GaAs substrate. In comparison with the InGaP barrier layer of a prior art, a difference ¾▵Ev0¾ of Ev for the GaAs substrate can be set to a small value. Therefore, ▵Ec between the barrier layer and the well layer can be set to 0.12eV or higher, and the overflow of electron from the well layer can be controlled. Accordingly, even when ▵Eg of the well layer and barrier layer is rather small, an element characteristic can be improved remarkably in comparison with the InGaP barrier layer. <P>COPYRIGHT: (C)2004,JPO |
