| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can sufficiently assure an overlay margin of a storage node contact and a bit line contact and can reduce contact resistance by preventing an opening failure, and to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing the semiconductor memory device includes a step of providing a semiconductor substrate having a gate and a large number of contact pads, a step of forming an interlayer insulating film on an overall substrate, a step of forming the storage node contact for exposing the corresponding contact pad of the contact pads by etching the interlayer insulating film, a step of forming a contact plug at the storage node contact, a step of forming a bit line pattern of a home state by etching the interlayer insulating film, a step of forming the bit line contact by etching the interlayer film so as to expose the corresponding contact pad out of the contact pads, and a step of forming a damascene bit line on the bit line pattern so as to be coupled to the contact pad through the bit line contact. <P>COPYRIGHT: (C)2004,JPO |
