发明名称 ALIGNMARK, MASK, SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an alignmark that does not cause pattern error, a mask provided with the alignmark, a semiconductor device, and its manufacturing method. <P>SOLUTION: The manufacturing method includes a step for depositing a film to be treated on a wafer, a step where a photoresist film is applied onto the film and it is exposed and developed to form a resist pattern on the film, and a step where the resist pattern is used as a mask to wet-etch the film. The resist pattern is provided with a alignmark mark pattern that is provided with line patterns 1 to 4 and retaining patterns 11 to 14 that are arranged on both ends of the line pattern and has a width L not to cause pattern error even when wet etching is applied. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004039903(A) 申请公布日期 2004.02.05
申请号 JP20020195750 申请日期 2002.07.04
申请人 SEIKO EPSON CORP 发明人 INABA SHOGO
分类号 G03F1/42;G03F9/00;H01L21/027;(IPC1-7):H01L21/027;G03F1/08 主分类号 G03F1/42
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