| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a light receiving element unit with an excellent response speed and high light receiving sensitivity. SOLUTION: The semiconductor device 30 is provided with the light receiving element unit A for converting light energy into electric energy, and an NPN transistor unit B. A reflection preventing film 12 comprising two layers of a silicon oxide film 10 and a silicon nitride film 11 is formed on the surface of a semiconductor substrate 31 in the light receiving region of the light receiving element unit A. Injecting ions of impurity elements through the reflection preventing film 12 form N type and P type impurity diffusion layers 32, 33 in the light receiving region. Since an impurity concentration profile in the thickness direction of the N type and P type impurity diffusion layers 32, 33 thus formed is formed in a way suitable for the generation and movement of carriers, the semiconductor device 30 provided with the light receiving element unit A with a high response speed and excellent light receiving sensitivity is obtained. COPYRIGHT: (C)2004,JPO
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