| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for preventing a variation in transistor characteristics caused by the thermal stress of a hydrogen barrier film and an increase in electric resistance due to the separation of a contact plug, and to provide its manufacturing method. SOLUTION: The semiconductor device comprises a source region formed in the form of a semiconductor substrate, a first insulating film 4, a second insulating film 5 and the first hydrogen barrier film 6 formed in order from downward so as to cover a transistor comprising a drain region 1 and a gate 2, the contact plug 7 connected to the source region or the drain region 1 by penetrating these films, and a capacity element comprising a capacity film 11, a lower electrode 8 and an upper electrode 12 formed in order from downward on the first barrier film 6 so as to be connected thereto, and has a function for relaxing the stress of the first hydrogen barrier film 6 by the first insulating film 4. COPYRIGHT: (C)2004,JPO
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