| 摘要 |
PROBLEM TO BE SOLVED: To obtain an inexpensive semiconductor device which has high performance and a high degree of integration, operates at a high speed on a low drive voltage, and is low in power consumption. SOLUTION: A bulk semiconductor device 12 is formed on a semiconductor substrate 11, a thin film transistor 14 is formed as interposing an inter-element insulating film 13 between itself and the semiconductor device 12, and the semiconductor device 12 is electrically connected to the thin film transistor 14 through a contact hole 15 formed in the inter-element insulating film 13. Or, the first thin film transistor is formed on the insulating substrate, the second thin film transistor is formed so as to interpose the inter-layer insulating film between itself and the first thin film transistor, and the first thin film transistor is electrically connected to the second thin film transistor through the contact hole formed in the inter-element insulating film. COPYRIGHT: (C)2004,JPO
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