| 摘要 |
PROBLEM TO BE SOLVED: To release a carrier at high speed or low voltage or release the carrier with a small remaining quantity, the carrier being trapped in a discrete carrier trap site in the gate insulating film of a nonvolatile memory which comprises a bottom insulating film, an intermediate film, and a top insulating film. SOLUTION: When the carrier is an electron, an electronic structure is provided in which the bottom insulating film has one side making contact with the intermediate film with larger electron affinity than the other side making contact with a first semiconductor area, so that an electron is readily released from the discrete trap site. When the carrier is a positive hole, an electronic structure is provided in which regarding a valence band top, the bottom insulating film has one side making contact with the intermediate film with higher energy than the other side making contact with the first semiconductor area, so that the positive hole is readily released from the discrete carrier trap site. COPYRIGHT: (C)2004,JPO
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