| 摘要 |
PROBLEM TO BE SOLVED: To lower interface level density in an interface with an oxide film in a semiconductor device having an MOS structure using an SiC semiconductor. SOLUTION: A dozens to hundreds nm-thick Si epitaxial layer 106 is formed by performing epitaxial growth for Si on an SiC epitaxial layer 104 at 1,050 to 1,250°C by using mixture gas of SiH<SB>4</SB>, N<SB>2</SB>by CVD. An SiO<SB>2</SB>film 108 is formed by thermally oxidizing the upper layer part of the Si epitaxial layer 106 so that the Si epitaxial layer 106 remains by 100nm or less, preferably by 1 to 5nm at 1,000 to 1,250°C in an oxygen atmosphere. COPYRIGHT: (C)2004,JPO
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