MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can remove contaminants (heavy metal) well even if heat treatment is performed for a semiconductor wafer in single wafer basis. SOLUTION: A semiconductor wafer 2 is arranged on a heater 1 by bringing the rear surface (an opposite surface of an element formation surface) of the semiconductor wafer 2 into contact with the heater 1. A cooling material 3 is arranged on the semiconductor wafer 2 by bringing the surface of the semiconductor wafer 2 into contact with the cooling material 3. Temperature gradient is formed in the thickness direction of the semiconductor wafer 2 by holding the semiconductor wafer 2 between the heater 1 and the cooling material 3 in this way. Furthermore, electric field is formed in the thickness direction of the semiconductor wafer 2 by applying a negative voltage to an electrode 4 and by applying a positive voltage to the electrode 5. COPYRIGHT: (C)2004,JPO