| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser irradiating apparatus for providing a crystalline semiconductor film in which, by controlling a Marangoni convection occurring on the surface of a liquid solution in laser annealing, crystallinity is excellent and besides there is less variation in quality, then to provide a semiconductor film crystallizing method using the same, and further to provide a semiconductor device using an FET for attaining high electric field effect mobility by the crystalline semiconductor film made by the crystallizing method. SOLUTION: An amorphous semiconductor film is once molten and when performing crystallization in a subsequent process, a magnetic field is applied to the surface or zone of the molten film with the principal aim of controlling the Marangoni convection in a surface of the molten film. The Maragoni convection is controlled by applying the magnetic field to prevent oxygen that has been taken in the semiconductor from segregating locally even if the molten zone is formed in an atmosphere containing oxygen, enabling the oxygen to be dispersed homogeneously in the formed crystalline semiconductor film. COPYRIGHT: (C)2004,JPO
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