| 摘要 |
In a semiconductor pressure sensor device comprising a housing (1) having a cavity (3), a semiconductor sensor chip (2) mounted within the cavity, leads (4) for conveying pressure detection signals, and bonding wires (6) electrically connecting the sensor chip and the leads, a sensitive portion (2a) of sensor chip (2), leads (4) and bonding wires (6) are covered with an electrically insulating fluorochemical gel material which has a penetration of 30-60 according to JIS K2220, a Tg of up to -45° C., and a degree of saturation swelling in gasoline at 23° C. of up to 7% by weight. The sensor device is improved in operation reliability and durability life.
|
