发明名称 |
Pressure-contact type semiconductor device |
摘要 |
Provided a pressure-contact type semiconductor device including: a plurality of semiconductor chips; a heat buffer plate provided on one surface side of the plural semiconductor chips; and a metal electrode plate provided on the heat buffer plate on a side opposite the plural semiconductor chips, a surface thereof at any position not facing the plural semiconductor chips on the heat buffer plate side having a region which alleviates elastic deformation of the heat buffer plate. Also provided is a pressure-contact type semiconductor device including: a plurality of semiconductor chips; a heat buffer plate provided on one surface side of the plural semiconductor chips; and a metal electrode plate provided on the heat buffer plate on a side opposite the plural semiconductor chips, a peripheral shape thereof extending beyond and thus being larger than a peripheral shape of the heat buffer plate.
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申请公布号 |
US2004021149(A1) |
申请公布日期 |
2004.02.05 |
申请号 |
US20030460414 |
申请日期 |
2003.06.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KITAZAWA HIDEAKI;HASEGAWA SHIGERU;HIYOSHI MICHIAKI |
分类号 |
H01L25/10;H01L23/051;H01L23/36;H01L23/48;H01L25/07;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L25/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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