Voltage sense signal generation device for power semiconductor component uses capacitive voltage divider in parallel with source-drain path

摘要

The voltage sense signal generation device provides a LV signal proportional to the signal across the source (S) and drain electrodes of the power semiconductor component, using a capacitive voltage divider formed in the semiconductor body (1) parallel to the source-drain path, with a source-gate capacitance providing a LV signal tap-off element in series with a source-drain capacitance acting as a HV element.