SEMICONDUCTOR DEVICE HAVING CRACKLESS CONTACT PLUG AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having a crackless contact plug and a manufacturing method thereof are provided to prevent cracks from occurring inside an interlayer dielectric by forming a plug of a low internal stress. CONSTITUTION: A line structure of a semiconductor device is provided with a semiconductor substrate(100) and an interlayer dielectric(110) formed at the upper portion of the semiconductor substrate. At this time, the interlayer dielectric includes a contact hole(H). The line structure further includes a barrier metal coated at the inner surface of the contact hole and a contact plug(145) filled into the contact hole. The barrier metal is made of a Ti layer(120) and a TiN layer(130). The contact plug contains Ti, Si, and N. Preferably, the contact plug includes a Ti1-xSixN layer.