| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of stabilizing an electrical resistance between a capacitor and dopant diffusion region of a transistor low and decreasing the number of processes. <P>SOLUTION: A gate electrode having gate structures 16a, 16b and sidewall spacers 22a on a silicon wafer 10 in a DRAM forming region and a logic forming region. Contact holes to an upper surface of the wafer 10 in the DRAM forming region are formed in a first interlayer insulation film 30 deposited on the gate electrode. These contact holes are opened so that they overlap the sidewall spacers 22a, a part of the gate electrode. A capacitor comprising a lower electrode 40, a high dielectric film 41, and an upper electrode 42 is formed along an inner wall of these contact holes. This significantly decreases a variation in contact area between the lower electrode 40 and a silicide film 23a on the surface of the impurity diffusion region 21a to stabilize electrical resistance between the both low. <P>COPYRIGHT: (C)2004,JPO |
