| 摘要 |
<P>PROBLEM TO BE SOLVED: To form an electrode having excellent ohmic characteristics on a p-type gallium-nitride compound semiconductor crystal by low temperature heat treatment. <P>SOLUTION: On the surface of a group III-V compound semiconductor crystal which is doped with a p-type dopand and is expressed by a general formula In<SB>x</SB>Ga<SB>y</SB>Al<SB>z</SB>N (0≤x≤1, 0≤y≤1, 0≤z≤1 and x+y+z=1), a first metal layer 11 of nickel (Ni), a second metal layer 12 of gold (Au) and a third metal layer 13 of platinum (Pt) are laminated in this order, and afterwards, heat treatment is performed at 210-690°C to make the first to third layers 11-13 into alloys so that an ohmic electrode 10 is provided. <P>COPYRIGHT: (C)2004,JPO |
