| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor structure in a low temperature polysilicon display. SOLUTION: The capacitor structure in a low temperature polysilicon display comprises a buffer layer on a substrate, a polysilicon layer on the buffer layer, a dielectric layer on the polysilicon layer, and a conductive layer on the dielectric layer wherein at least one layer has a non-flat structure. A pixel structure of an LTPS thin film transistor display is formed by combining the inventive capacitor structure with a thin film structure manufactured by an LTPS manufacturing process. The capacitor structure has the wider surface of a capacitor as compared with that of a conventional display. Consequently, the capacity and the opening area ratio of the LTPS display are increased. A manufacturing process is simple. The quality of the display is enhanced greatly by simply adding an extra process to the conventional manufacturing process of LTPS display. COPYRIGHT: (C)2004,JPO |
