| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device stably having high reliability by restraining contamination from a protective insulating film into which ions are implanted, without exerting a bad influence upon a boundary form between an active region and an element separation region. SOLUTION: This method comprises a step for separately forming a first active region 2 and a second active region 3 on a semiconductor substrate 1 by an element separation region 4; a step for forming a protective insulating film 5 on the first and second active regions 2 and 3; a step for implanting ions into the first active region 2 through the protective insulating film 5; a step for performing annealing treatment and oxidation treatment in a nitrogen atmosphere, under the condition where the protective insulating film 5 is left; a step for removing the protective insulating film 5 on the second active region 3; and a step for forming a gate insulating film 8 on the second active region 3 under the condition where the protective insulating film 5 on the first active region 2 is left. Through reaction of oxygen and silica in the oxidation treatment (sacrifice oxidation) after heating treatment under the nitrogen atmosphere, contaminants comes into a condition where it is held in the protective insulating film 5, so that contamination from the ion implanting part is restrained. COPYRIGHT: (C)2004,JPO
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