发明名称 MAGNETIC RANDOM ACCESS MEMORY AND MAGNETIC MEMORY CELL
摘要 PROBLEM TO BE SOLVED: To provide a means for easily controlling the magnetizing direction of a specific magnetic memory cell, and a means for stabilizing the magnetization of the magnetic memory cell in a magnetic random access memory. SOLUTION: A magnetic memory cell is shaped so that demagnetization factors specific to a magnetic body can be as uniform as possible within the plane of a magnetic film, that is, shaped like, for example, a circle or ellipse, and the long axial direction is set so as to be interposed between the crossing angle of a word line and a sense line. Thus, it is made easy to control the magnetizing direction of the selected magnetic memory cell, and to stabilize the magnetization. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004040028(A) 申请公布日期 2004.02.05
申请号 JP20020198489 申请日期 2002.07.08
申请人 HITACHI LTD 发明人 SAITO MAKOTO
分类号 G11C11/15;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L27/105 主分类号 G11C11/15
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