OXYGEN ION IMPLANTATION DEVICE AND SILICON WAFER WITH IMPLANTED OXIDE FILM MANUFACTURED BY USING THE DEVICE

摘要

PROBLEM TO BE SOLVED: To solve problems in a conventional device that implantation can not be completed with uniform wafer temperature distribution by beam power from intermittent irradiation and it is difficult to manufacture an SOI-SIMOX wafer having a uniform silicon layer due to the ununiformity of temperature distribution. SOLUTION: A beam cross-sectional shape controller 13 capable of changing a beam width when ion implantation reaches the prescribed quantity of implantation is used. An output signal from the controller 13 is inputted to a driving power supply 7' for magnetic four-electrode lenses 7 for changing the beam width. The quantity of implantation for changing the beam width is set in the controller 13 as a prescribed value, or a value determined from a controller (e.g. a personal computer) for performing an implantation operation. COPYRIGHT: (C)2004,JPO