| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which can increase the concentration of impurities to be activated. SOLUTION: Into the semiconductor device, first impurities are injected so that density distribution becomes maximum at a first depth. Further, second impurities are injected into the semiconductor substrate so that the concentration distribution becomes maximum at a second depth shallower than the first depth. A first pulse laser beam which has a first pulse width is made incident on the semiconductor substrate on condition that it has first pulse energy density on the surface of the semiconductor substrate, thereby activating mainly the second impurities. A second pulse laser beam which has a second pulse width larger than the first pulse width is made incident on the semiconductor substrate on condition that it has second pulse energy density lower than the first pulse energy density on the surface of the semiconductor substrate, thereby activating mainly first impurities. COPYRIGHT: (C)2004,JPO
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