| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming apparatus capable of eliminating a problem wherein upon a thin film being synthesized using boron trichloride gas as stock gas, non-reaction gas obstructs normal operation of an exhaust system, and a good quality thin film is prevented from being effectively synthesized, and of synthesizing a thin film with excellent reproducibility. SOLUTION: A cooling section is provided downstream a reaction chamber of a film forming apparatus, whereby non-reaction gas is liquefied and recovered. The cooling section is constructed with a metal pipe, and a spiral portion is provided to improve cooling efficiency, downstream of which there is provided a region for storing a deposited substance. A bypass line is disposed to continuously form a film. Further, the cooling section is demounted with ease for processing a recovered substance. COPYRIGHT: (C)2004,JPO
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