| 摘要 |
PROBLEM TO BE SOLVED: To facilitate the removal of metal oxide films attached inside a reaction chamber even by means of cleaning using a remote plasma. SOLUTION: A processing gas is supplied from a material gas supply section 31 into the reaction chamber 43 via a shower head 6, to form the metal oxide films such as a Zr oxide film and an Hf oxide film on a wafer 40. In order to remove the metal oxide films attached inside the reaction chamber 43 due to repetitious film formation processes, gas cleaning is carried out for the inside of the reaction chamber 43 after the films are formed. First, in a cleaning gas supply section 32, gases containing chlorine atoms such as ClF<SB>3</SB>are activated by a remote plasma source 24. Then, the activated gases are supplied into the reaction chamber 43 from the cleaning gas supply section 32 via the shower head 6. By bringing the activated gases into contact with the metal oxide films attached inside the reaction chamber 43, the metal oxide films are turned into metal chlorides such as a Zr chloride and an Hf chloride which have a high vapor pressure even at a low temperature. The metal chlorides are vaporized and ejected, resulting in the removal of the metal oxide films attached inside the reaction chamber. COPYRIGHT: (C)2004,JPO
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