CVD DEVICE WITH CLEANING MECHANISM USING FLUORINE GAS AND METHOD OF CLEANING CVD DEVICE WITH FLUORINE GAS

摘要

PROBLEM TO BE SOLVED: To provide a method of cleaning CVD device by which by-products, such as SiO2, Si3N4, etc., adhering to or depositing on the internal wall of a reaction chamber, electrodes, etc., can be removed efficiently at the time of film forming and an unfavorable influence, such as the global warming effect etc., upon the environment can be reduced by suppressing the discharge of discharged cleaning gas to an extremely small amount and, in addition, a cost can be reduced. SOLUTION: After a film is formed on a substrate by means of the CVD device by producing a fluorine gas component and other components by making a fluorine compound act by imparting energy to the fluorine compound and refining the produced fluorine gas component after separating the fluorine gas component from the other components, the by-products adhering to the internal wall of the reaction chamber are removed by generating plasma from the separated and refined fluorine gas component. COPYRIGHT: (C)2004,JPO