| 摘要 |
PURPOSE: To realize a high speed and low consumption power CMOS device by forming a lattice strain-relaxed SiGe thin film suitable for manufacturing a strained Si-CMOS on an insulation film without doping impurities. CONSTITUTION: A method of manufacturing a semiconductor device comprises processes of forming a monocrystalline SiGe layer 21 on an SOI substrate 10, thereafter forming a resist 31 into an insular pattern on the SiGe layer 21, then with the patterned resist 31 as a mask for implanting ions into the SiGe layer 21 to from an amorphous SiGe layer 23, heat-treating the SiGe layers 21 and 23 to oxidize part of a front surface to form an oxide film 24, increasing a Ge composition of the SiGe layer 21 to form a strain-relaxed SiGe layer 25, forming a strained Si layer 41 after removing the oxide film 24, which will become an element formation region of a transistor on the strain-relaxed SiGe layer 25, and then forming a MOSFET in the strained Si layer 41.
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