| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor with LDD structure and its manufacturing method which can reduce hot electron effects, current leak, and punch through. SOLUTION: A thin film transistor with a single LDD structure is provided. A single LDD structure 224 is positioned between a source/drain structure 2211 and 2221. The single LDD structure 224 has a first side face adjacent to a first structure of the source/drain structure and a second side face essentially separated from a second structure of the source/drain structure by a semiconductor material 223. The other thin film transistor having a first LDD structure and a second LDD structure which is adjacent to the first LDD structure is also provided. Manufacturing processes of such thin film transistors are disclosed. COPYRIGHT: (C)2004,JPO
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