| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor memory element which is capable of making dimensional variations small relative to focal variations. <P>SOLUTION: The method of manufacturing the semiconductor memory element comprises a first process of arranging a mask where an auxiliary pattern is formed at the center of each of a first, a second, and a third pattern respectively above the surface of a semiconductor substrate where a resist film is formed; a second process of making the resist film undergo an exposure process through the mask and forming a first, a second, and a third resist pattern corresponding to the mask on the resist film; a third process of forming a first, a second, and a third element isolation region corresponding to the first, second, and third resist pattern on the surface of the semiconductor substrate by the use of the first, second, and third resist pattern; and a fourth process of forming a gate electrode which is extended in the second direction as spreading over the third element isolation region via the second element isolation region and a space between the second and third element isolation region. <P>COPYRIGHT: (C)2004,JPO |
