发明名称 PLASMA TREATMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of preventing plasma from being diffused to the lower part of a vacuum container without lowering a gas exhaust characteristic. <P>SOLUTION: Shield meshes having two kinds of hole diameters are halved and arranged on a wafer-present side and an absent part of the vacuum container; and holes of diameter small enough to securely prevent discharge diffusion are formed in a punching metal shape on a surface which is nearly perpendicular to a gas flow and holes of a diameter large enough to secure the exhaust characteristic are formed in a punching metal shape on a surface which is nearly parallel to the gas flow. Or shield meshes having a certain angle relative to the gas flow are halved and arranged on the wafer-present side and absent side of the vacuum container. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004040017(A) 申请公布日期 2004.02.05
申请号 JP20020198391 申请日期 2002.07.08
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MATSUDA IZURU
分类号 H05H1/46;C23C16/505;H01L21/205;H01L21/3065 主分类号 H05H1/46
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