发明名称 |
PLASMA TREATMENT APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of preventing plasma from being diffused to the lower part of a vacuum container without lowering a gas exhaust characteristic. <P>SOLUTION: Shield meshes having two kinds of hole diameters are halved and arranged on a wafer-present side and an absent part of the vacuum container; and holes of diameter small enough to securely prevent discharge diffusion are formed in a punching metal shape on a surface which is nearly perpendicular to a gas flow and holes of a diameter large enough to secure the exhaust characteristic are formed in a punching metal shape on a surface which is nearly parallel to the gas flow. Or shield meshes having a certain angle relative to the gas flow are halved and arranged on the wafer-present side and absent side of the vacuum container. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004040017(A) |
申请公布日期 |
2004.02.05 |
申请号 |
JP20020198391 |
申请日期 |
2002.07.08 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MATSUDA IZURU |
分类号 |
H05H1/46;C23C16/505;H01L21/205;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|