发明名称 |
SURFACE TREATMENT METHOD AND MANUFACTURING EQUIPMENT FOR SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface treatment method capable of reducing a manufacturing time, and manufacturing equipment for a semiconductor device. <P>SOLUTION: The surface treatment method is provided with an ionizing process wherein a substance is ionized and an ionizing substance is produced; a starting process for starting the introduction of the ionized ionizing substance into a base substance; a finishing process for finishing the introduction of the ionizing substance into the base substance; a measuring process wherein an ion current value of the ionizing substance ionized in the ionizing process is measured before finishing the finishing process; and a control process wherein an ion injection treatment time showing a time from the starting process until the finishing process is controlled on the basis of measurements by the measuring process in such a manner that a total dose showing the total amount of the ionizing substance which is introduced in the base substance becomes a desired total dose. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004039874(A) |
申请公布日期 |
2004.02.05 |
申请号 |
JP20020195137 |
申请日期 |
2002.07.03 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TAKASE MICHIHIKO;YOSHIDA TETSUHISA |
分类号 |
H05H1/00;H01L21/265;H01L29/78 |
主分类号 |
H05H1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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