| 摘要 |
PROBLEM TO BE SOLVED: To provide a 3C-SiC or GaN semiconductor and the manufacturing method of the same which can avoid the dry area of a substrate. SOLUTION: Upon the epitaxial growth of 3C-SiC or GaN which is effected on a substrate of Si, multi-layered (2 layered) epitaxial growth film is formed of an organic metall material. In this case, the epitaxial growth film of SiC or GaN is formed of a buffer layer and a main body layer. The buffer layer is formed by the epitaxial growth at a comparatively low temperature at a slow speed. In the case of SiC, the epitaxial growth of the buffer layer is effected at a temperature of 500-900°C at a speed of 0.1-1μm/h. The epitaxial growth of the main body layer is effected on the buffer layer at a temperature of 1000-1300°C at a speed of 1-15μm/h. COPYRIGHT: (C)2004,JPO
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