DIFFERENCE OF SUPPLY VOLTAGE TO DRIVER OF MEMORY ARRAY AND WORD LINE AT THE TIME OF STANDBY

摘要

PROBLEM TO BE SOLVED: To reduce leak of a SRAM at standby. SOLUTION: In a SRAM array 22 in which leak is improved at standby, when array lower supply voltage VSS-WLis raised at the time of standby, word line driver lower supply voltage VSS-WLis raised. When the SRAM array 22 is in an active mode, the source voltage is supplied to a SRAM array lower supply node VSS-ARRAYand a word line driver lower supply node VSS-WL. When the SRAM array is in a standby mode, voltage offset is provided between the source voltage and both of the SRAM array lower supply node VSS-ARRAYand the word line driver lower supply node VSS-WL. COPYRIGHT: (C)2004,JPO