| 摘要 |
The present invention generally relates to provides a method for utilizing a re-oxidation step of a nitride layer to form a super thin nitride gate oxide layer. First, an oxide layer or a nitride oxide layer provided with a high nitrogen contain and a very thin thickness is growing on a semiconductor substrate, wherein the oxide layer can be provided with a large quantity nitrogen element by a nitrogen-penetrating treatment. Then, a second oxide layer is growing by a rapidly thermal step. Since in the second time to perform the oxidation of the substrate, the oxygen atom must penetrate the nitrogenized oxide layer to perform the oxidation with the substrate, so the present invention can decrease the oxidation rate and obtain a dense gate oxide layer with a good interface performance. The present invention can improve the disadvantage of too fast oxidation rate of the super thin gate oxide layer process and overcome the disadvantage of the difficult for obtaining a uniform and dense oxide layer.
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