| 摘要 |
<p>An RF power device comprising a power transistor fabricated in a first semiconductor chip and a MOSCAP type structure fabricated in a second semiconductor chip. A voltage limiting device is provided for protecting the power transistor from input voltage spikes and is preferably fabricated in the semiconductor chip along with the MOSCAP. Alternatively, the voltage limiting device can be a discrete element fabricated on or adjacent to the capacitor semiconductor chip. By removing the voltage limiting device from the power transistor chip, fabrication and testing of the voltage limiting device is enhanced, and semiconductor area for the power device is increased and aids in flexibility of device fabrication.</p> |
