发明名称 INTEGRATED CIRCUIT DEVICE AND ELECTRONIC DEVICE
摘要 PURPOSE: An integrated circuit device and an electronic device are provided to increase a degree of integration by preventing any occurrence of an electrical connection between circuits formed in integrated circuits of upper and lower layers in a multilayer structure. CONSTITUTION: An integrated circuit device has an integrated circuit(2) formed on a front surface of a silicon substrate(1), an insulating layer(12) formed on a rear surface of the substrate, and connection piles(4) penetrating the substrate, the integrated circuit, and the insulating layer. An electronic device has plural integrated circuit devices laminated in a multilayer structure, in which a connection pile formed in an integrated circuit in the device as an upper position in the multilayer structure is electrically connected to a connection pile formed in an integrated circuit as a lower position under a requirement of an electric connection for the piles. The pile is electrically insulated from the pile through the insulating layer under no requirement of the electric connection for them.
申请公布号 KR20040011363(A) 申请公布日期 2004.02.05
申请号 KR20030051287 申请日期 2003.07.25
申请人 RENESAS TECHNOLOGY CORP. 发明人 TOTTORI ISAO
分类号 H01L23/12;H01L21/3205;H01L21/822;H01L23/48;H01L23/52;H01L25/065;H01L25/07;H01L25/18;H01L27/04;(IPC1-7):H01L21/320 主分类号 H01L23/12
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