| 摘要 |
1,173,919. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 7 Dec., 1966 [30 Dec., 1965], No. 54713/66. Heading H1K. " Hot " electrons are emitted, under the action of an applied potential 13, from one of two non-rectifying contacts 5, 6 on a semi-conducting region 2, the electrons passing through a PN junction 14 into a semi-conducting region 3 of opposite conductivity type to that of the region 2. A further non-rectifying contact 11 is provided on the region 3, and a potential 12 is applied across the contacts 5, 11 to bias the junction 14. As shown the junction 14 is reversebiased, and the contacts 5, 6 are formed by alloying or diffusing N-type zones into the N + - type region 2, which is itself formed by diffusion through an etched oxide mask 4, e.g. of SiO 2 . The region 2 is preferably less than 1 Á thick, and may also be formed by epitaxy. Conducting paths 9, 10 are then applied to the zones 5, 6. In a second embodiment the junction is forward-biased, and the contacts 5, 6 comprise N + -type zones within an N-type region 2. In both embodiments the contact 11 is formed by a P+-zone in the P-type region 3. A number of such devices may be formed on a common P-type substrate, with the conducting paths 9, 10 linking the contacts 5, 6 in series. The contacts 5, 6 may be arranged interdigitally on the semi-conducting region 2. P-type contacts may also be used in P + -type material, and in this case the semi-conductor material of the contact may differ from that of the P + -type region. Suitable semi-conductor materials include germanium, silicon, III/V or II/VI compounds, ionic semi-conductors or organic semi-conductors. The voltage applied to the contacts 5, 6 may be direct and/or alternating and is less than double the Peltier voltage between the zones 5, 6 and the region 2. The voltage across the junction 14 is at most equal to the breakdown voltage of the junction. The invention may be applied to multi-junction devices, and may be used in integrated circuits or micro-wave circuits. |
