发明名称 |
Wafer-level method for fine-pitch, high aspect ratio chip interconnect |
摘要 |
A metal structure 300 for an integrated circuit having a plurality of contact pads and a patterned metallization 301 protected by an overcoat layer 303,306. The structure comprises a plurality of windows in the overcoat, selectively exposing the chip metallization, wherein the windows are spaced apart by less than 150 µm center to center. A metal column 308 is positioned on each of the windows; the preferred metal is copper; the column has a height-to-width aspect ratio larger than 1.25 and an upper surface wettable by re-flowable metal. The preferred column height-to-width aspect ratio is between 2.0 and 4.0, operable to absorb thermomechanical stress. A cap of a re-flowable metal 309 is positioned on each of the columns. The metal structure is used for attaching the IC chip to an external part 311. |
申请公布号 |
EP1387402(A2) |
申请公布日期 |
2004.02.04 |
申请号 |
EP20030102098 |
申请日期 |
2003.07.10 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ARBUTHNOT, DIANE;EMMETT, JEFF R.;AMADOR, GONZALO |
分类号 |
H01L23/485;H01L23/52;H01L21/3205;H01L21/60 |
主分类号 |
H01L23/485 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|