| 摘要 |
A method of producing a very large area germanium layer on a silicon substrate, comprises forming an initial layer of germanium on the silicon substrate such that rounded S-K protuberances are produced by lattice mismatch. Oxidation produces silicon dioxide between the protuberances, and a subsequent reduction step exposes the tops of the protuberances. Since the top regions are almost perfectly relaxed and free of stress, these form nucleation sites for the subsequent growth of a final layer of germanium, formed as single crystals each extending from a nucleation site. |
